Invention Grant
- Patent Title: Power semiconductor module and power unit device
- Patent Title (中): 功率半导体模块和功率单元设备
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Application No.: US13989932Application Date: 2011-04-27
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Publication No.: US09129931B2Publication Date: 2015-09-08
- Inventor: Katsuhiko Omae , Mamoru Watanabe , Tetsushi Watanabe , Yoshihito Asao
- Applicant: Katsuhiko Omae , Mamoru Watanabe , Tetsushi Watanabe , Yoshihito Asao
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Agent Richard C. Turner
- Priority: JP2011-065703 20110324
- International Application: PCT/JP2011/060250 WO 20110427
- International Announcement: WO2012/127696 WO 20120927
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/367 ; H01L23/495 ; H01L23/00 ; H01L23/31

Abstract:
A power semiconductor module includes: a plurality of first metal plates arranged in the same planar state; a power semiconductor chip mounted on the first metal plate; and an overbridge-shaped second metal plate which is composed of bridge frame sections and leg sections that support the bridge frame sections, the leg sections being for appropriately performing solder bonding between electrodes of the power semiconductor chips and between the electrode of the power semiconductor chip and the first metal plate, the power semiconductor module being configured by a resin package in which these members are sealed with electrically insulating resin. In the power semiconductor module, the solder bonding section of the leg section is formed in a planar shape by bending process and is provided at a position lower than the bridge frame section.
Public/Granted literature
- US20130241047A1 POWER SEMICONDUCTOR MODULE AND POWER UNIT DEVICE Public/Granted day:2013-09-19
Information query
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