发明授权
- 专利标题： Power semiconductor module and power unit device
- 专利标题（中）： 功率半导体模块和功率单元设备
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申请号： US13989932申请日： 2011-04-27
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公开(公告)号： US09129931B2公开(公告)日： 2015-09-08
- 发明人: Katsuhiko Omae , Mamoru Watanabe , Tetsushi Watanabe , Yoshihito Asao
- 申请人： Katsuhiko Omae , Mamoru Watanabe , Tetsushi Watanabe , Yoshihito Asao
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 代理商 Richard C. Turner
- 优先权： JP2011-065703 20110324
- 国际申请： PCT/JP2011/060250 WO 20110427
- 国际公布： WO2012/127696 WO 20120927
- 主分类号： H01L23/34
- IPC分类号： H01L23/34 ; H01L23/367 ; H01L23/495 ; H01L23/00 ; H01L23/31
摘要：
A power semiconductor module includes: a plurality of first metal plates arranged in the same planar state; a power semiconductor chip mounted on the first metal plate; and an overbridge-shaped second metal plate which is composed of bridge frame sections and leg sections that support the bridge frame sections, the leg sections being for appropriately performing solder bonding between electrodes of the power semiconductor chips and between the electrode of the power semiconductor chip and the first metal plate, the power semiconductor module being configured by a resin package in which these members are sealed with electrically insulating resin. In the power semiconductor module, the solder bonding section of the leg section is formed in a planar shape by bending process and is provided at a position lower than the bridge frame section.
公开/授权文献
- US20130241047A1 POWER SEMICONDUCTOR MODULE AND POWER UNIT DEVICE 公开/授权日：2013-09-19
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