发明授权
- 专利标题： Semiconductor memory device and method for manufacturing same
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US13948486申请日： 2013-07-23
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公开(公告)号： US09130020B2公开(公告)日： 2015-09-08
- 发明人: Kotaro Noda
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/768 ; H01L45/00 ; H01L27/24
摘要：
According to one embodiment, a semiconductor memory device includes a plurality of interconnects of an nth layer, a plurality of interconnects of a (n+1)th layer, a plurality of stacked films of the nth layer, each of the plurality of stacked films of the nth layer including a memory element, an inter-layer insulating film of the nth layer, a plurality of interconnects of a (n+2)th layer, a plurality of stacked films of the (n+1)th layer, each of the plurality of stacked films of the (n+1)th layer including a memory element, and an inter-layer insulating film of the (n+1)th layer. The inter-layer insulating film of the (n+1)th layer is provided also at a side surface of an end portion in the first direction of the interconnects of the nth layer.
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