A method of forming a phase change material memory cell includes forming a number of memory structure regions, wherein the memory structure regions include a bottom electrode material and a sacrificial material, forming a number of insulator regions between the number of memory structure regions, forming a number of openings between the number of insulator regions and forming a contoured surface on the number of insulator regions by removing the sacrificial material and a portion of the number of insulator regions, forming a number of dielectric spacers on the number of insulator regions, forming a contoured opening between the number of insulator regions and exposing the bottom electrode material by removing a portion of the number of dielectric spacers, and forming a phase change material in the opening between the number of insulator regions.