发明授权
US09133564B2 Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other
有权
III族氮化物晶体在具有至少两个表面的种子上的等温生长彼此形成锐角，右或钝角
- 专利标题： Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other
- 专利标题（中）： III族氮化物晶体在具有至少两个表面的种子上的等温生长彼此形成锐角，右或钝角
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申请号： US13283862申请日： 2011-10-28
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公开(公告)号： US09133564B2公开(公告)日： 2015-09-15
- 发明人: Siddha Pimputkar , James S. Speck , Shuji Nakamura , Shin-Ichiro Kawabata
- 申请人： Siddha Pimputkar , James S. Speck , Shuji Nakamura , Shin-Ichiro Kawabata
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Gates & Cooper LLP
- 主分类号： C30B7/10
- IPC分类号： C30B7/10 ; C30B29/40
摘要：
An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.
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