Invention Grant
US09134438B2 Radiation detecting element using oxide crystal and method of manufacturing oxide crystal
有权
使用氧化物晶体的放射线检测元件及氧化物晶体的制造方法
- Patent Title: Radiation detecting element using oxide crystal and method of manufacturing oxide crystal
- Patent Title (中): 使用氧化物晶体的放射线检测元件及氧化物晶体的制造方法
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Application No.: US14301573Application Date: 2014-06-11
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Publication No.: US09134438B2Publication Date: 2015-09-15
- Inventor: Tatsuya Iwasaki , Tatsuya Saito , Toru Den , Yoshinobu Nakamura , Hidenori Takagi
- Applicant: The University of Tokyo , CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Canon Kabushiki Kaisha,The University of Tokyo
- Current Assignee: Canon Kabushiki Kaisha,The University of Tokyo
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2013-130012 20130620
- Main IPC: G01T1/24
- IPC: G01T1/24 ; H01L27/146 ; H01L31/18 ; H01L31/032 ; H01L31/08 ; G01T1/26
Abstract:
Provided is a radiation detecting element, including: a semiconductor layer including a tin oxide crystal; and a detecting unit configured to detect, as an electrical signal, charges generated in the semiconductor layer when the semiconductor layer is irradiated with radiation, in which a resistivity of the semiconductor layer is 107 Ω·cm or more.
Public/Granted literature
- US20140374609A1 RADIATION DETECTING ELEMENT USING OXIDE CRYSTAL AND METHOD OF MANUFACTURING OXIDE CRYSTAL Public/Granted day:2014-12-25
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