发明授权
US09134625B2 Lithographic apparatus and device manufacturing method for measuring wafer parameters using non-standard alignment settings
有权
用于使用非标准对准设置测量晶片参数的平版印刷设备和器件制造方法
- 专利标题: Lithographic apparatus and device manufacturing method for measuring wafer parameters using non-standard alignment settings
- 专利标题(中): 用于使用非标准对准设置测量晶片参数的平版印刷设备和器件制造方法
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申请号: US13010388申请日: 2011-01-20
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公开(公告)号: US09134625B2公开(公告)日: 2015-09-15
- 发明人: Alexander Viktorovych Padiy , Boris Menchtchikov
- 申请人: Alexander Viktorovych Padiy , Boris Menchtchikov
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号: G03B27/32
- IPC分类号: G03B27/32 ; G03F7/20 ; G03F9/00
摘要:
A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus, such that the initial exposure is performed while using non-standard alignment model settings optimized for accuracy, such as those used for testing the apparatus. An associated lithographic apparatus is also disclosed.
公开/授权文献
- US20110205513A1 Lithographic Apparatus and Device Manufacturing Method 公开/授权日:2011-08-25
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