Invention Grant
US09136004B2 Semiconductor memory device and programming method for flash memory for improving reliabilty of insulating layer of memory cell 有权
用于闪存的半导体存储器件和编程方法,用于提高存储单元的绝缘层的可靠性

Semiconductor memory device and programming method for flash memory for improving reliabilty of insulating layer of memory cell
Abstract:
A programming method for suppressing deterioration of an insulating layer in a memory cell is provided. In the programming method for a flash memory of the invention, a cell unit including programming units that have been programmed is electrically isolated from a bit line; a cell unit not including programming units is electrically coupled with the bit line; a programming voltage is applied to selected word lines; and a pass voltage is applied to non-selected word lines. Moreover, during a period of applying the programming voltage, carriers are generated in a P-well, and hot carriers passing through a depletion region and accelerated by an electric field are injected into the memory cell.
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