Invention Grant
US09136004B2 Semiconductor memory device and programming method for flash memory for improving reliabilty of insulating layer of memory cell
有权
用于闪存的半导体存储器件和编程方法,用于提高存储单元的绝缘层的可靠性
- Patent Title: Semiconductor memory device and programming method for flash memory for improving reliabilty of insulating layer of memory cell
- Patent Title (中): 用于闪存的半导体存储器件和编程方法,用于提高存储单元的绝缘层的可靠性
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Application No.: US14272516Application Date: 2014-05-08
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Publication No.: US09136004B2Publication Date: 2015-09-15
- Inventor: Riichiro Shirota
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Jianq Chyun IP Office
- Priority: JP2013-137997 20130701
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10

Abstract:
A programming method for suppressing deterioration of an insulating layer in a memory cell is provided. In the programming method for a flash memory of the invention, a cell unit including programming units that have been programmed is electrically isolated from a bit line; a cell unit not including programming units is electrically coupled with the bit line; a programming voltage is applied to selected word lines; and a pass voltage is applied to non-selected word lines. Moreover, during a period of applying the programming voltage, carriers are generated in a P-well, and hot carriers passing through a depletion region and accelerated by an electric field are injected into the memory cell.
Public/Granted literature
- US20150003163A1 SEMICONDUCTOR MEMORY DEVICE AND PROGRAMMING METHOD FOR FLASH MEMORY Public/Granted day:2015-01-01
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