Invention Grant
- Patent Title: Compositions for etching and methods of forming a semiconductor device using the same
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Application No.: US14573845Application Date: 2014-12-17
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Publication No.: US09136120B2Publication Date: 2015-09-15
- Inventor: Young Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
- Applicant: Samsung Electronics Co., Ltd. , Soulbrain Co., Ltd.
- Applicant Address: KR KR
- Assignee: Samsung Electronics Co., Ltd.,Soulbrain Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.,Soulbrain Co., Ltd.
- Current Assignee Address: KR KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2011-0106461 20111018
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/02 ; C09K13/04 ; C23F1/16 ; C09K13/06 ; H01L21/311 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; H01L27/115
Abstract:
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
Public/Granted literature
- US20150104932A1 COMPOSITIONS FOR ETCHING AND METHODS OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2015-04-16
Information query
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