Invention Grant
US09136268B2 Semiconductor device and semiconductor memory device including capacitor
有权
半导体器件和包括电容器的半导体存储器件
- Patent Title: Semiconductor device and semiconductor memory device including capacitor
- Patent Title (中): 半导体器件和包括电容器的半导体存储器件
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Application No.: US13834492Application Date: 2013-03-15
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Publication No.: US09136268B2Publication Date: 2015-09-15
- Inventor: Se-il Oh , Seok-jae Lee , Sung-hoon Kim , Joung-yeal Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2012-0049274 20120509
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L27/02 ; H01L27/105 ; H01L29/94 ; H01L27/22 ; H01L27/08
Abstract:
A semiconductor device includes: a second transistor having a second conductive type formed on a first well region having a first conductive type; a first transistor having a first conductive type formed on a second well region having a second conductive type; a first well guard ring having the first conductive type, the first well guard ring including at least a first portion formed between the first transistor and the second transistor; a second well guard ring having the first conductive type, the second well guard ring including at least a first portion formed between the first transistor and the second transistor; and a first capacitor formed on at least one of the first well region and the second well region, and located between the first portion of the first well guard ring and the first portion of the second well guard ring.
Public/Granted literature
- US20130299890A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING CAPACITOR Public/Granted day:2013-11-14
Information query
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