Invention Grant
- Patent Title: Silicon on nothing devices and methods of formation thereof
- Patent Title (中): 无硅器件及其形成方法
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Application No.: US13648170Application Date: 2012-10-09
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Publication No.: US09136328B2Publication Date: 2015-09-15
- Inventor: Thoralf Kautzsch , Alessia Scire , Steffen Bieselt
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GMBH
- Current Assignee: Infineon Technologies Dresden GMBH
- Current Assignee Address: DE Dresden
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/06 ; H01L21/324 ; H01L29/78 ; B81C1/00
Abstract:
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.
Public/Granted literature
- US20140097521A1 Silicon on Nothing Devices and Methods of Formation Thereof Public/Granted day:2014-04-10
Information query
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