发明授权
- 专利标题： Method of forming a magnetic tunnel junction structure
- 专利标题（中）： 形成磁隧道结结构的方法
-
申请号： US11943042申请日： 2007-11-20
-
公开(公告)号： US09136463B2公开(公告)日： 2015-09-15
- 发明人: Xia Li , Seung H. Kang , Xiaochun Zhu
- 申请人： Xia Li , Seung H. Kang , Xiaochun Zhu
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Donald D. Min
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L43/12
摘要：
In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) structure including a conductive layer on a substrate. The method also includes depositing a sacrificial layer on the conductive layer before depositing a patterning film layer.
公开/授权文献
- US20090130779A1 Method of Forming a Magnetic Tunnel Junction Structure 公开/授权日：2009-05-21
信息查询
IPC分类:
