发明授权
- 专利标题: Memory system with error detection and retry modes of operation
- 专利标题(中): 具有错误检测和重试操作模式的内存系统
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申请号: US12940942申请日: 2010-11-05
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公开(公告)号: US09141479B2公开(公告)日: 2015-09-22
- 发明人: Ely K. Tsern , Mark A. Horowitz , Frederick A. Ware
- 申请人: Ely K. Tsern , Mark A. Horowitz , Frederick A. Ware
- 申请人地址: US CA Sunnyvale
- 专利权人: Rambus Inc.
- 当前专利权人: Rambus Inc.
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: H03M13/00
- IPC分类号: H03M13/00 ; G06F11/14 ; G06F11/07 ; G06F11/10 ; H04L1/00 ; H04L1/08 ; H04L1/18 ; G06F11/00
摘要:
A memory system includes a link having at least one signal line and a controller. The controller includes at least one transmitter coupled to the link to transmit first data, and a first error protection generator coupled to the transmitter. The first error protection generator dynamically adds an error detection code to at least a portion of the first data. At least one receiver is coupled to the link to receive second data. A first error detection logic determines if the second data received by the controller contains at least one error and, if an error is detected, asserts a first error condition. The system includes a memory device having at least one memory device transmitter coupled to the link to transmit the second data. A second error protection generator coupled to the memory device transmitter dynamically adds an error detection code to at least a portion of the second data.
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