发明授权
- 专利标题: Asymmetric write scheme for magnetic bit cell elements
- 专利标题(中): 磁位元件的非对称写入方案
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申请号: US14076427申请日: 2013-11-11
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公开(公告)号: US09142278B2公开(公告)日: 2015-09-22
- 发明人: Xiaochun Zhu , Hari M. Rao , Jung Pill Kim , Seung Hyuk Kang
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理商 C. Teresa Wong; Paul Holdaway
- 主分类号: G11C11/14
- IPC分类号: G11C11/14 ; G11C11/16
摘要:
A first write driver applies a first voltage above a fixed potential to a first terminal. A second write driver applies a second voltage that is higher above the fixed potential than the first voltage to a second terminal. There is at least one magnetic tunnel junction (MTJ) structure coupled at the first terminal at a first side to the first write driver and coupled at the second terminal at a second side to the second write driver. The first side of the MTJ structure receives the first voltage and the second side of the MTJ structure receives a ground voltage to change from a first state to a second state. The second side of the MTJ structure receives the second voltage and the first side of the MTJ structure receives the ground voltage to change from the second state to the first state.
公开/授权文献
- US20140063933A1 ASYMMETRIC WRITE SCHEME FOR MAGNETIC BIT CELL ELEMENTS 公开/授权日:2014-03-06
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