Invention Grant
US09142316B2 Embedded selector-less one-time programmable non-volatile memory
有权
嵌入式无选择器一次性可编程非易失性存储器
- Patent Title: Embedded selector-less one-time programmable non-volatile memory
- Patent Title (中): 嵌入式无选择器一次性可编程非易失性存储器
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Application No.: US14017417Application Date: 2013-09-04
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Publication No.: US09142316B2Publication Date: 2015-09-22
- Inventor: Yanxiang Liu , Min-hwa Chi , Anurag Mittal
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/12 ; G11C17/16 ; H01L21/762 ; H01L27/112 ; H01L23/525
Abstract:
An OTP anti-fuse memory array without additional selectors and a manufacturing method are provided. Embodiments include forming wells of a first polarity in a substrate, forming a bitline of the first polarity in each well, and forming plural metal gates across each bitline, wherein no source/drain regions are formed between the metal gates.
Public/Granted literature
- US20150062996A1 EMBEDDED SELECTOR-LESS ONE-TIME PROGRAMMABLE NON-VOLATILE MEMORY Public/Granted day:2015-03-05
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