发明授权
- 专利标题： Carrier structure for stacked-type semiconductor device, method of producing the same, and method of fabricating stacked-type semiconductor device
- 专利标题（中）： 层叠型半导体装置的载体结构及其制造方法以及叠层型半导体装置的制造方法
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申请号： US12315417申请日： 2008-12-03
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公开(公告)号： US09142440B2公开(公告)日： 2015-09-22
- 发明人: Masanori Onodera , Kouichi Meguro , Junichi Kasai , Yasuhiro Shinma , Koji Taya , Junji Tanaka
- 申请人： Masanori Onodera , Kouichi Meguro , Junichi Kasai , Yasuhiro Shinma , Koji Taya , Junji Tanaka
- 申请人地址： US CA San Jose
- 专利权人： Cypess Semiconductor Corporation
- 当前专利权人： Cypess Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/683 ; H01L21/673 ; H01L25/10 ; H01L25/00 ; H01L25/065
摘要：
A method of producing a carrier structure for fabricating a stacked-type semiconductor device includes laminating thin plates for a lower carrier associated with an upper carrier. The method includes forming openings in the thin plates by etching or electric discharge machining. The lower carrier includes a magnet that is buried therein and the magnet maintains contact between the lower carrier and the upper carrier. A thin plate of the laminated thin plates is provided on each opposing surface of the magnet. The lower carrier further includes multiple magnets arranged around a periphery of the lower carrier and through a center region of the lower carrier that is between magnets on the periphery.
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