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US09142610B2 Semiconductor device including supporters on a lower electrode thereof and method of fabricating the same 有权
包括在其下电极上的支撑体的半导体器件及其制造方法

Semiconductor device including supporters on a lower electrode thereof and method of fabricating the same
Abstract:
A semiconductor device and a method of fabricating the same, the device including a substrate having a transistor formed thereon; a plurality of lower electrodes formed on the substrate; a first supporter and a second supporter on the plurality of lower electrodes; a dielectric film formed on the lower electrode, the first supporter, and the second supporter; and an upper electrode formed on the dielectric film, wherein the first and second supporters are positioned between the lower electrodes, and the first and second supporters include a first material and a second material.
Abstract(Chinese):

一种半导体器件及其制造方法，该器件包括其上形成有晶体管的衬底; 形成在所述基板上的多个下电极; 在所述多个下电极上的第一支撑件和第二支撑件; 形成在下电极，第一支撑体和第二支撑体上的电介质膜; 以及形成在所述电介质膜上的上电极，其中所述第一和第二支撑件位于所述下电极之间，并且所述第一和第二支撑件包括第一材料和第二材料。

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