Invention Grant
US09142616B2 Silicon wafers with suppressed minority carrier lifetime degradation
有权
具有抑制少数载流子寿命衰减的硅晶片
- Patent Title: Silicon wafers with suppressed minority carrier lifetime degradation
- Patent Title (中): 具有抑制少数载流子寿命衰减的硅晶片
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Application No.: US14596269Application Date: 2015-01-14
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Publication No.: US09142616B2Publication Date: 2015-09-22
- Inventor: Robert J. Falster , Vladimir Voronkov
- Applicant: SunEdison Inc.
- Applicant Address: US MO Maryland Heights
- Assignee: SunEdison, Inc.
- Current Assignee: SunEdison, Inc.
- Current Assignee Address: US MO Maryland Heights
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L29/16 ; H01L21/322
Abstract:
Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.
Public/Granted literature
- US20150123248A1 SILICON WAFERS WITH SUPPRESSED MINORITY CARRIER LIFETIME DEGRADATION Public/Granted day:2015-05-07
Information query
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