发明授权
- 专利标题: Light emitting diode
- 专利标题(中): 发光二极管
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申请号: US13099127申请日: 2011-05-02
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公开(公告)号: US09142715B2公开(公告)日: 2015-09-22
- 发明人: Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hong Chol Lim , Hwa Mok Kim
- 申请人: Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hong Chol Lim , Hwa Mok Kim
- 申请人地址: KR Ansan-si
- 专利权人: Seoul Viosys Co., Ltd.
- 当前专利权人: Seoul Viosys Co., Ltd.
- 当前专利权人地址: KR Ansan-si
- 代理机构: H.C. Park & Associates, PLC
- 优先权: KR10-2010-0059861 20100624; KR10-2010-0072821 20100728
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/10 ; H01L33/02
摘要:
An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.
公开/授权文献
- US20110316026A1 LIGHT EMITTING DIODE 公开/授权日:2011-12-29