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US09147029B2 Stretch dummy cell insertion in FinFET process 有权
FinFET过程中的拉伸虚拟细胞插入

Stretch dummy cell insertion in FinFET process
摘要:
A method embodiment includes identifying, by a processor, an empty region in an integrated circuit (IC) layout, wherein the empty region is a region not including any active fins. The method further includes providing a standard dummy fin cell and forming an expanded dummy fin cell. The standard dummy fin cell includes a plurality of partitions. The expanded dummy fin cell is larger than the standard dummy fin cell, and the expanded dummy fin cell includes integer multiples of each of the plurality of partitions. The empty region is filled with a plurality of dummy fin cells, wherein the plurality of dummy fin cells includes the expanded dummy fin cell. The plurality of dummy fin cells is implemented in an IC.
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