Invention Grant
US09147623B2 Stacked microelectronic devices and methods for manufacturing stacked microelectronic devices
有权
堆叠的微电子器件和用于制造叠层微电子器件的方法
- Patent Title: Stacked microelectronic devices and methods for manufacturing stacked microelectronic devices
- Patent Title (中): 堆叠的微电子器件和用于制造叠层微电子器件的方法
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Application No.: US14457000Application Date: 2014-08-11
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Publication No.: US09147623B2Publication Date: 2015-09-29
- Inventor: Edmund Koon Tian Lua , See Hiong Leow , Choon Kuan Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Priority: SG200706007-2 20070816
- Main IPC: H01L23/16
- IPC: H01L23/16 ; H01L23/00 ; H01L25/065 ; H01L21/50 ; H01L23/498 ; H01L25/00
Abstract:
Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second microelectronic die to individual metal spacers. In another embodiment, the method of manufacturing the microelectronic device may further include forming top-tier spacer elements on front-side wire bonds of the first die.
Public/Granted literature
- US20140346683A1 STACKED MICROELECTRONIC DEVICES AND METHODS FOR MANUFACTURING STACKED MICROELECTRONIC DEVICES Public/Granted day:2014-11-27
Information query
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