Invention Grant
US09147639B2 Semiconductor dies having opposing sides with different reflectivity
有权
具有不同反射率的相对侧的半导体管芯
- Patent Title: Semiconductor dies having opposing sides with different reflectivity
- Patent Title (中): 具有不同反射率的相对侧的半导体管芯
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Application No.: US14015353Application Date: 2013-08-30
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Publication No.: US09147639B2Publication Date: 2015-09-29
- Inventor: Mathias Vaupel , Günther Ruhl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/48 ; H01L21/56 ; H01L21/673 ; H01L23/29 ; H01L23/31
Abstract:
A method of processing semiconductor dies is provided. Each semiconductor die has a first side with one or more terminals, a second side opposite the first side and sidewalls extending between the first and the second sides. The semiconductor dies are processed by placing the semiconductor dies on a support substrate so that the first side of each semiconductor die faces the support substrate and the second side faces away from the support substrate. A coating is applied to the semiconductor dies placed on the support substrate. The coating has a lower reflectivity than the first side of the semiconductor dies. The coating covers the second side and at least a region of the sidewalls nearest the second side of each semiconductor die. The semiconductor dies are removed from the support substrate after applying the coating for further processing as loose dies such as taping.
Public/Granted literature
- US20150061113A1 Semiconductor Dies Having Opposing Sides with Different Reflectivity Public/Granted day:2015-03-05
Information query
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