Invention Grant
- Patent Title: Resistive-switching memory element
- Patent Title (中): 电阻式开关存储元件
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Application No.: US14614143Application Date: 2015-02-04
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Publication No.: US09147841B2Publication Date: 2015-09-29
- Inventor: Tony P. Chiang , Chi-I Lang , Prashant B. Phatak
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L45/00 ; H01L27/24
Abstract:
A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.
Public/Granted literature
- US20150147866A1 Resistive-Switching Memory Element Public/Granted day:2015-05-28
Information query
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