发明授权
- 专利标题: Semiconductor device defect inspection method and system thereof
- 专利标题(中): 半导体器件缺陷检查方法及其系统
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申请号: US14119138申请日: 2012-04-27
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公开(公告)号: US09153020B2公开(公告)日: 2015-10-06
- 发明人: Yuji Takagi
- 申请人: Yuji Takagi
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2011-112958 20110520
- 国际申请: PCT/JP2012/061317 WO 20120427
- 国际公布: WO2012/160945 WO 20121129
- 主分类号: G06K9/00
- IPC分类号: G06K9/00 ; G06T7/00 ; H01L21/66
摘要:
Provided are a semiconductor device defect inspection method and system thereof, with which predetermined hot spots are inspected using a SEM, and with which the frequency of defects occurring at the hot spot is estimated statistically and with reliability. An inspection point is designated in design data by the defect type. A plurality of pre-designated inspection points is selected by the defect type from the designated inspection points. The plurality of pre-designated inspection points by defect type thus selected are image captured by the inspection points. A defect ratio, which is a ratio of the plural inspection points which are image captured by the defect type to the plural defects detected, and a reliability interval of the defect ratio which is computed by the defect type is compared with a preset reference value. A defect type having a defect occurrence ratio which exceeds the reference value is derived.