发明授权
- 专利标题： Method of forming a planar surface for a semiconductor device structure, and related methods of forming a semiconductor device structure
- 专利标题（中）： 形成半导体器件结构的平面的方法以及形成半导体器件结构的相关方法
-
申请号： US13712635申请日： 2012-12-12
-
公开(公告)号： US09153451B2公开(公告)日： 2015-10-06
- 发明人: Andrew Dennis Watson Carswell , Wayne Hai-Wei Huang , Siddartha Kondoju , Jin Lu , Suresh Ramakrishnan , Kozaburo Sakai , Sony Varghese , Andrey V. Zagrebelny
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461 ; H01L21/306 ; H01L21/3105 ; H01L21/321
摘要：
A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.
公开/授权文献
信息查询
IPC分类:
