发明授权
US09153488B1 Semiconductor device, resistor and manufacturing method of the same
有权
半导体器件，电阻及其制造方法相同
- 专利标题： Semiconductor device, resistor and manufacturing method of the same
- 专利标题（中）： 半导体器件，电阻及其制造方法相同
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申请号： US14483561申请日： 2014-09-11
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公开(公告)号： US09153488B1公开(公告)日： 2015-10-06
- 发明人: Dae Sung Eom
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2014-0045556 20140416
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8242 ; H01L21/20 ; H01L21/768 ; H01L49/02
摘要：
A resistor includes a first conductive layer; a second conductive layer protruding from the first conductive layer; a third conductive layer located above and facing the first conductive layer to face the first conductive layer; and at least two contact plugs electrically coupled to the third conductive layer.
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