发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14638052申请日： 2015-03-04
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公开(公告)号： US09153495B2公开(公告)日： 2015-10-06
- 发明人: Mayu Aoki , Kenichi Takeda , Kazuyuki Hozawa
- 申请人： Hitachi, Ltd.
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge PC
- 优先权： JP2012-99405 20120425
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/46 ; H01L21/82 ; H01L21/52
摘要：
A method of manufacturing a semiconductor device includes: a step of forming an inorganic insulating film and an organic insulating film on one surface of a first substrate; a step of forming an opening portion by dry-etching a laminated film of them; a step of forming a bump electrode inside the opening portion; and a step (bonding step) of bonding the one surface of the first substrate having a bump electrode formed thereon and one surface of a second substrate having a bump electrode formed thereon to each other. A surface treatment on the inorganic insulating film is performed subsequent to the step of forming the opening portion but prior to the bonding step. By performing the surface treatment on the organic insulating film, connecting property between the substrates can be improved.
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