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发明授权
US09153559B2 Semiconductor devices including through silicon via electrodes and methods of fabricating the same 有权
包括硅通孔电极的半导体器件及其制造方法

Semiconductor devices including through silicon via electrodes and methods of fabricating the same
摘要：
A semiconductor device may include a semiconductor substrate, a through via electrode, and a buffer. The through via electrode may extend through a thickness of the semiconductor substrate with the through via electrode surrounding an inner portion of the semiconductor substrate so that the inner portion of the semiconductor substrate may thus be isolated from the outer portion of the semiconductor substrate. The buffer may be in the inner portion of the semiconductor substrate with the through via electrode surrounding and spaced apart from the buffer. Related methods are also discussed.
摘要（中）：

半导体器件可以包括半导体衬底，通孔电极和缓冲器。 通孔电极可以通过半导体衬底的厚度延伸穿过半导体衬底的内部的通孔电极，使得半导体衬底的内部部分可以与半导体衬底的外部部分隔离。 缓冲器可以在半导体衬底的内部，其中通孔电极围绕并与缓冲器间隔开。 还讨论了相关方法。

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