发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US14265624申请日： 2014-04-30
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公开(公告)号： US09153601B2公开(公告)日： 2015-10-06
- 发明人: Shin-Shueh Chen , Po-Hsueh Chen
- 申请人： AU Optronics Corporation
- 申请人地址： TW Hsin-Chu
- 专利权人： AU OPTRONICS CORPORATION
- 当前专利权人： AU OPTRONICS CORPORATION
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： WPAT, PC
- 代理商 Justin King
- 优先权： TW102116368U 20130508
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/31 ; H01L27/12 ; H01L29/66 ; H01L21/336 ; H01L21/30
摘要：
A semiconductor device includes a substrate, a gate electrode, an insulating layer, a source electrode, a drain electrode, a semiconductor channel layer, a first passivation layer and a second passivation layer. The gate is formed on the substrate. The insulating layer covers the gate electrode. The source electrode and the drain electrode are positioned on the insulating layer. The semiconductor channel layer is disposed on the insulating layer, and connects the source electrode and the drain electrode. The first passivation layer covers the source electrode, the drain electrode and the semiconductor channel layer. The first passivation layer includes silicon oxide. The second passivation layer is disposed on the first passivation layer. The second passivation layer includes silicon nitride that has a hydrogen concentration of about 2.0×1022 atom/cm3 to about 3.11×1022 atom/cm3.
公开/授权文献
- US20140332799A1 SEMICONDUCTOR DEVICE 公开/授权日：2014-11-13
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