Invention Grant
- Patent Title: Metal-oxide-metal (MOM) capacitor with enhanced capacitance
- Patent Title (中): 具有增强电容的金属氧化物金属（MOM）电容器
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Application No.: US13784895Application Date: 2013-03-05
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Publication No.: US09153642B2Publication Date: 2015-10-06
- Inventor: Xia Li , Bin Yang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522 ; H01L27/07 ; H01L29/94
Abstract:
A particular metal-oxide-metal (MOM) capacitor device includes a conductive gate material coupled to a substrate. The MOM capacitor device further includes a first metal structure coupled to the conductive gate material. The MOM capacitor device further includes a second metal structure coupled to the substrate and proximate to the first metal structure.
Public/Granted literature
- US20140252543A1 METAL-OXIDE-METAL (MOM) CAPACITOR WITH ENHANCED CAPACITANCE Public/Granted day:2014-09-11
Information query
IPC分类:
