发明授权
- 专利标题: Semiconductor fuses in a semiconductor device comprising metal gates
- 专利标题(中): 半导体熔断器包括金属栅极
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申请号: US13732859申请日: 2013-01-02
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公开(公告)号: US09153684B2公开(公告)日: 2015-10-06
- 发明人: Jens Heinrich , Ralf Richter , Kai Frohberg
- 申请人: Jens Heinrich , Ralf Richter , Kai Frohberg
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Amerson Law Firm, PLLC
- 优先权: DE102009046248 20091030
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/265 ; H01L21/8238 ; H01L23/525 ; H01L29/66
摘要:
In a replacement gate approach, the semiconductor material of the gate electrode structures may be efficiently removed during a wet chemical etch process, while this material may be substantially preserved in electronic fuses. Consequently, well-established semiconductor-based electronic fuses may be used instead of requiring sophisticated metal-based fuse structures. The etch selectivity of the semiconductor material may be modified on the basis of ion implantation or electron bombardment.