发明授权
US09156752B2 High purity E-1-chloro-3,3,3-trifluoropropene and methods of making the same
有权
高纯度E-1-氯-3,3,3-三氟丙烯及其制备方法
- 专利标题: High purity E-1-chloro-3,3,3-trifluoropropene and methods of making the same
- 专利标题(中): 高纯度E-1-氯-3,3,3-三氟丙烯及其制备方法
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申请号: US12984024申请日: 2011-01-04
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公开(公告)号: US09156752B2公开(公告)日: 2015-10-13
- 发明人: Konstantin A. Pokrovski , Rajiv Ratna Singh , Ian Shankland , Hsueh Sung Tung
- 申请人: Konstantin A. Pokrovski , Rajiv Ratna Singh , Ian Shankland , Hsueh Sung Tung
- 申请人地址: US NJ Morristown
- 专利权人: Honeywell International Inc.
- 当前专利权人: Honeywell International Inc.
- 当前专利权人地址: US NJ Morristown
- 代理商 Bruce O. Bradford
- 主分类号: C07C21/18
- IPC分类号: C07C21/18 ; C07C17/20 ; C07C17/25
摘要:
The present invention discloses high purity E-1-chloro-3,3,3-trifluoropropene (1233zd(E)) and methods to produce the same. More specifically, the present invention discloses the methods of making 1233zd(E) essentially free of toxic impurities (e.g. 2-chloro-3,3,3-trifluoropropene (1233xf), chlorotetrafluoro-propene (1224), and 3,3,3-trifluoropropyne). The present invention further provides methods for making high purity 1233zd(E) with concentration of 1233xf and 1224 at or below 200 parts per million (ppm) and 3,3,3-trifluoropropyne impurities at or below 20 ppm. Formation of 1233xf impurity can be avoided if pure 1,1,1,3,3-pentachloropropane is used as a starting material. It was also found that formation of 1233xf is avoided if a liquid phase manufacturing process is used.
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