发明授权
US09157004B2 Composition for forming copper pattern and method for forming copper pattern
有权
用于形成铜图案的组合物和形成铜图案的方法
- 专利标题: Composition for forming copper pattern and method for forming copper pattern
- 专利标题(中): 用于形成铜图案的组合物和形成铜图案的方法
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申请号: US14358164申请日: 2012-10-23
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公开(公告)号: US09157004B2公开(公告)日: 2015-10-13
- 发明人: Eui-chul Kang , Tomoyuki Ohtake , Katsuaki Suganuma , Masaya Nogi , Natsuki Komoda
- 申请人: NOF CORPORATION , OSAKA UNIVERSITY
- 申请人地址: JP Tokyo JP Osaka
- 专利权人: NOF CORPORATION,OSAKA UNIVERSITY
- 当前专利权人: NOF CORPORATION,OSAKA UNIVERSITY
- 当前专利权人地址: JP Tokyo JP Osaka
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2011-249949 20111115
- 国际申请: PCT/JP2012/077372 WO 20121023
- 国际公布: WO2013/073349 WO 20130523
- 主分类号: C09K13/06
- IPC分类号: C09K13/06 ; C09D11/52 ; C23C18/08 ; H01B1/22 ; C09D11/30 ; C23C18/06 ; H05K1/09 ; H05K3/12
摘要:
A composition for copper patterning and a method of copper patterning using the composition are provided, which composition is excellently safe in copper patterning, sintering at lower temperatures, and capable of forming a highly conducive copper pattern of a desired shape even on a plastic substrate. The composition contains Component A: a copper β-ketocarboxylate compound of formula (1): (R1, R2: H or C1-C6 straight- or C3-C6 branched-hydrocarbon group, etc.); and based on 1 mol of this compound, Component B: an amine compound having a boiling point of not higher than 250° C. at 0.1 to 500 mol; and Component C-1: an organic acid having pKa of not more than 4 at 0.01 to 20 mol, and/or Component C-2: an organic copper compound composed of copper and an organic acid having pKa of not more than 4 at 0.01 to 100 mol. The composition is useful in the field of electronics.
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