发明授权
- 专利标题： Standard cell metal structure directly over polysilicon structure
- 专利标题（中）： 标准电池金属结构直接在多晶硅结构上
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申请号： US14015924申请日： 2013-08-30
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公开(公告)号： US09158877B2公开(公告)日： 2015-10-13
- 发明人: Shang-Chih Hsieh , Hui-Zhong Zhuang , Ting-Wei Chiang , Chun-Fu Chen , Hsiang-Jen Tseng
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： G06F17/50
- IPC分类号： G06F17/50 ; H01L29/78
摘要：
A semiconductor structure includes a first active area structure, an isolation structure surrounding the first active area structure, a first polysilicon structure, a first metal structure, and a second metal structure. The first polysilicon structure is over the first active area structure. The first metal structure is directly over a first portion of the first active area structure. The second metal structure is directly over and in contact with a portion of the first polysilicon structure and in contact with the first metal structure.
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