发明授权
- 专利标题： Methods of forming semiconductor device structures
- 专利标题（中）： 形成半导体器件结构的方法
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申请号： US13590928申请日： 2012-08-21
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公开(公告)号： US09159677B2公开(公告)日： 2015-10-13
- 发明人: Xinyu Zhang , Soichi Sugiura , Yu Zeng
- 申请人： Xinyu Zhang , Soichi Sugiura , Yu Zeng
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L23/552
- IPC分类号： H01L23/552 ; H01L23/532
摘要：
A method of forming a semiconductor device structure comprises forming at least one reflective structure comprising at least two dielectric materials having different refractive indices over at least one radiation-sensitive structure, the at least one reflective structure configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range. Additional methods of forming a semiconductor device structure are described. Semiconductor device structures are also described.
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