- 专利标题： Aluminum gallium nitride etch stop layer for gallium nitride based devices
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申请号： US13299227申请日： 2011-11-17
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公开(公告)号： US09159784B2公开(公告)日： 2015-10-13
- 发明人: Linda Romano , Andrew P. Edwards , Richard J. Brown , David P. Bour , Hui Nie , Isik C. Kizilyalli , Thomas R. Prunty , Mahdan Raj
- 申请人： Linda Romano , Andrew P. Edwards , Richard J. Brown , David P. Bour , Hui Nie , Isik C. Kizilyalli , Thomas R. Prunty , Mahdan Raj
- 申请人地址： US CA San Jose
- 专利权人： Avogy, Inc.
- 当前专利权人： Avogy, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Kilpatrick Townsend and Stockton LLP
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/06 ; H01L29/66 ; H01L29/778 ; H01L21/306 ; H01L29/47 ; H01L29/20 ; H01L29/10
摘要：
A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, and a first metallic structure electrically coupled to the second surface of the III-nitride substrate. The semiconductor structure further includes an AlGaN epitaxial layer coupled to the III-nitride epitaxial layer of the first conductivity type, and a III-nitride epitaxial structure of a second conductivity type coupled to the AlGaN epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.
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