Invention Grant
- Patent Title: Method of reading out an image sensor with transfer gate boost
- Patent Title (中): 用传输门增强读出图像传感器的方法
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Application No.: US14133127Application Date: 2013-12-18
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Publication No.: US09160958B2Publication Date: 2015-10-13
- Inventor: Sohei Manabe , Jeong-Ho Lyu
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H04N5/378
- IPC: H04N5/378 ; H04N5/3745 ; H01L27/146

Abstract:
An image sensor includes photosensitive regions, transfer transistors, and one or more shared charge-to-voltage mechanism. A method for reading out the image sensor includes enabling a first transfer transistor to transfer photo-generated charge from a first photosensitive region to a shared charge-to-voltage mechanism. The method also includes no more than partially enabling a second transfer transistor to partially turn on the second transfer transistor to increase a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive region to the shared charge-to-voltage mechanism.
Public/Granted literature
- US20150172579A1 METHOD OF READING OUT AN IMAGE SENSOR WITH TRANSFER GATE BOOST Public/Granted day:2015-06-18
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