Invention Grant
US09165679B2 Post package repairing method, method of preventing multiple activation of spare word lines, and semiconductor memory device including fuse programming circuit
有权
邮包修复方法，防止备用字线多次激活的方法，以及包括熔丝编程电路的半导体存储器件
- Patent Title: Post package repairing method, method of preventing multiple activation of spare word lines, and semiconductor memory device including fuse programming circuit
- Patent Title (中): 邮包修复方法，防止备用字线多次激活的方法，以及包括熔丝编程电路的半导体存储器件
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Application No.: US14030066Application Date: 2013-09-18
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Publication No.: US09165679B2Publication Date: 2015-10-20
- Inventor: Jong-min Oh , Yung-young Lee , Hoyoung Song , Chiwook Kim , Donghyun Sohn
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2012-0103550 20120918; KR10-2012-0132477 20121121; KR10-2013-0050264 20130503
- Main IPC: G11C29/50
- IPC: G11C29/50 ; G11C29/04 ; G11C29/00 ; G11C8/08 ; G11C8/14
Abstract:
Provided is a method of preventing simultaneous activation of redundancy memory line or spare word lines, the method including: programming a fail address of a memory line determined to be defective; reprogramming the fail address if a first spare line for the memory line is determined to be defective; storing additional information with respect to the reprogrammed fail address; and activating a second spare line and inactivating the first spare line, referring to the additional information.
Public/Granted literature
Information query
