Invention Grant
- Patent Title: Etching composition and method of manufacturing semiconductor device using the same
- Patent Title (中): 蚀刻组合物及使用其制造半导体器件的方法
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Application No.: US14086426Application Date: 2013-11-21
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Publication No.: US09165759B2Publication Date: 2015-10-20
- Inventor: Sang Won Bae , Yongsun Ko , Byoungho Kwon , Bo yun Kim , Hongjin Kim , Sungoh Park , Kuntack Lee , Hyosan Lee , Sol Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0132476 20121121
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/02 ; H01L21/3213 ; H01L21/768
Abstract:
An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.
Public/Granted literature
- US20140141616A1 ETCHING COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2014-05-22
Information query
IPC分类:
