发明授权
- 专利标题: Thin film transistor array substrate and liquid crystal display device
- 专利标题(中): 薄膜晶体管阵列基板和液晶显示装置
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申请号: US14351998申请日: 2012-10-24
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公开(公告)号: US09165948B2公开(公告)日: 2015-10-20
- 发明人: Yuichi Iyama , Takatomo Yoshioka , Kazuhiko Tsuda
- 申请人: Sharp Kabushiki Kaisha
- 申请人地址: JP Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Osaka
- 代理机构: Keating & Bennett, LLP
- 优先权: JP2011-239348 20111031
- 国际申请: PCT/JP2012/077394 WO 20121024
- 国际公布: WO2013/065529 WO 20130510
- 主分类号: H01L27/32
- IPC分类号: H01L27/32 ; H01L27/12 ; G02F1/1343 ; G02F1/1362
摘要:
The present invention provides a thin film transistor array substrate and a liquid crystal display device including the thin film transistor array substrate that are preferably applicable to a liquid crystal display device including the three-layered electrode structure that enables high response speed and high transmittance, and can have a high aperture ratio. The thin film transistor array substrate of the present invention includes: a thin film transistor element, gate bus lines, and source bus lines, in which the thin film transistor array substrate includes electrodes, the electrodes include a first electrode and a second electrode, the first electrode includes a linear portion along the source bus lines, the first electrode includes a linear portion along the gate bus lines, at least one linear portion along the source bus lines is disposed transversely to the linear portion along the gate bus lines in a plan view of main face of the substrate and is connected to a drain electrode of the thin film transistor element at a position overlapping the gate bus lines, and the second electrode is a planar electrode.
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