Invention Grant
- Patent Title: Structure of thermoelectric film
- Patent Title (中): 热电薄膜的结构
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Application No.: US13798121Application Date: 2013-03-13
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Publication No.: US09166137B2Publication Date: 2015-10-20
- Inventor: Ming-Sheng Leu , Tai-Sheng Chen , Chih-Chao Shih
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW101147271A 20121213
- Main IPC: H01L35/10
- IPC: H01L35/10 ; H01L35/14
Abstract:
A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity.
Public/Granted literature
- US20140166065A1 STRUCTURE OF THERMOELECTRIC FILM Public/Granted day:2014-06-19
Information query
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