Invention Grant
- Patent Title: Resistive memory device
- Patent Title (中): 电阻式存储器件
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Application No.: US13595324Application Date: 2012-08-27
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Publication No.: US09166162B2Publication Date: 2015-10-20
- Inventor: Sung-Joon Yoon , Hyung-Dong Lee
- Applicant: Sung-Joon Yoon , Hyung-Dong Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0050242 20120511
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L45/00 ; H01L27/24
Abstract:
A resistive memory device includes: a memory cell comprising first and second electrodes and a resistive layer formed therebetween, wherein the resistive layer is formed of a resistance change material; and a strained film formed adjacent to the resistive layer and configured to apply a strain to the resistive layer.
Public/Granted literature
- US20130299770A1 RESISTIVE MEMORY DEVICE Public/Granted day:2013-11-14
Information query
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