发明授权
- 专利标题： Substrate processing apparatus and method for manufacturing semiconductor device
- 专利标题（中）： 基板处理装置及半导体装置的制造方法
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申请号： US13617783申请日： 2012-09-14
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公开(公告)号： US09171724B2公开(公告)日： 2015-10-27
- 发明人: Shinji Yashima , Atsushi Umekawa
- 申请人： Shinji Yashima , Atsushi Umekawa
- 申请人地址： JP Tokyo
- 专利权人： HITACHI KOKUSAIELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAIELECTRIC INC.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff PLC
- 优先权： JP2011-202165 20110915
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/263 ; H05B6/80
摘要：
A substrate processing apparatus includes a process chamber which processes a substrate, a conductive substrate support table which is installed within the process chamber, a dielectric plate on which the substrate is mounted, the dielectric plate being placed on the substrate support table, a microwave generator which is installed outside the process chamber, and a microwave supplying unit which supplies a microwave generated by the microwave generator into the process chamber.