Invention Grant
- Patent Title: Semiconductor devices having conductive via structures and methods for fabricating the same
- Patent Title (中): 具有导电通孔结构的半导体器件及其制造方法
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Application No.: US13758239Application Date: 2013-02-04
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Publication No.: US09171753B2Publication Date: 2015-10-27
- Inventor: Ho-Jin Lee , Kyu-ha Lee , Gilheyun Choi , YongSoon Choi , Pil-Kyu Kang , Byung-Lyul Park , Hyunsoo Chung
- Applicant: Ho-Jin Lee , Kyu-ha Lee , Gilheyun Choi , YongSoon Choi , Pil-Kyu Kang , Byung-Lyul Park , Hyunsoo Chung
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0015238 20120215
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/00 ; H01L23/48 ; H01L21/02 ; H01L25/065 ; H01L23/31 ; H01L21/683
Abstract:
In one embodiment, the method includes forming a conductive via structure in a base layer. The base layer has a first surface and a second surface, and the second surface is opposite the first surface. The method further includes removing the second surface of the base layer to expose the conductive via structure such that the conductive via structure protrudes from the second surface, and forming a first lower insulating layer over the second surface such that an end surface of the conductive via structure remains exposed by the first lower insulating layer.
Public/Granted literature
- US20130210222A1 SEMICONDUCTOR DEVICES HAVING CONDUCTIVE VIA STRUCTURES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2013-08-15
Information query
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