发明授权
- 专利标题: Semiconductor device and method of fabricating the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US14488707申请日: 2014-09-17
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公开(公告)号: US09171825B2公开(公告)日: 2015-10-27
- 发明人: Sang-Sick Park , In-Young Lee , Byoung-Soo Kwak , Min-Soo Kim , Sang-Wook Park , Tae-Je Cho
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Ellsworth IP Group PLLC
- 优先权: KR10-2013-0138448 20131114
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L25/065 ; H01L21/56 ; H01L23/31 ; H01L23/36 ; H01L23/498
摘要:
A semiconductor device and a method of fabricating the same includes providing a first semiconductor chip which has first connection terminals, providing a second semiconductor chip which comprises top and bottom surfaces facing each other and has second connection terminals and a film-type first underfill material formed on the bottom surface thereof, bonding the first semiconductor chip to a mounting substrate by using the first connection terminals, bonding the first semiconductor chip and the second semiconductor chip by using the first underfill material, and forming a second underfill material which fills a space between the mounting substrate and the first semiconductor chip and covers side surfaces of the first semiconductor chip and at least part of side surfaces of the second semiconductor chip.
公开/授权文献
- US20150130083A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日:2015-05-14
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