Invention Grant
- Patent Title: Method of fabricating semiconductor device and device fabricated thereby
- Patent Title (中): 制造半导体器件的方法及其制造的器件
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Application No.: US14200610Application Date: 2014-03-07
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Publication No.: US09171853B2Publication Date: 2015-10-27
- Inventor: Jang-Hyun You , Hyeong Park , Bongtae Park , Jeehoon Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0024622 20130307
- Main IPC: H01L27/115
- IPC: H01L27/115

Abstract:
A semiconductor device includes a plurality of lines disposed on a semiconductor substrate, and remaining line patterns disposed spaced apart from the lines on extensions from the lines. The lines include first end-portions adjacent to the remaining line patterns. The remaining line patterns include second end-portions adjacent to the lines. The first end-portions and second end-portions are formed to have mirror symmetry with respect to each other.
Public/Granted literature
- US20140252444A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND DEVICE FABRICATED THEREBY Public/Granted day:2014-09-11
Information query
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