发明授权
- 专利标题: Semiconductor devices including variable width floating gates
- 专利标题(中): 包括可变宽度浮动栅极的半导体器件
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申请号: US13966511申请日: 2013-08-14
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公开(公告)号: US09171854B2公开(公告)日: 2015-10-27
- 发明人: HyoJoong Kim , ByeongHoon Kim , In-Young Kim , Sang Bong Shin , Songha Oh
- 申请人: HyoJoong Kim , ByeongHoon Kim , In-Young Kim , Sang Bong Shin , Songha Oh
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2012-0130328 20121116
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L27/115 ; H01L29/423
摘要:
A semiconductor device includes a substrate including an active region defined by a device isolation pattern and a floating gate on the active region. The floating gate includes an upper portion, a lower portion having a width greater than a width of the upper portion, and a step-difference portion between the upper portion and the lower portion. A dielectric pattern is on the floating gate, and a control gate is on the dielectric pattern. The lower portion of the floating gate has a height of about 4 nm or more.