发明授权
- 专利标题： Self-aligned implants to reduce cross-talk of imaging sensors
- 专利标题（中）： 自对准植入物减少成像传感器的串扰
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申请号： US14291384申请日： 2014-05-30
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公开(公告)号： US09171876B2公开(公告)日： 2015-10-27
- 发明人: Shih-Chi Fu , Kai Tzeng , Wen-Chen Lu
- 申请人： Shih-Chi Fu , Kai Tzeng , Wen-Chen Lu
- 申请人地址： TW
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/331 ; H01L27/146 ; H01L21/762 ; H01L31/18
摘要：
A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate. The method includes patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate. The method further includes performing a first implant to form a deep doped region between the two neighboring sensor elements and starting at a distance below a top surface of the substrate. The method further includes performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with a top portion of the deep doped region.
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