发明授权
- 专利标题： LDMOS with thick interlayer-dielectric layer
- 专利标题（中）： LDMOS具有较厚的层间介电层
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申请号： US13272301申请日： 2011-10-13
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公开(公告)号： US09171916B1公开(公告)日： 2015-10-27
- 发明人: David L. Snyder , Sudarsan Uppili , Guillaume Bouche
- 申请人： David L. Snyder , Sudarsan Uppili , Guillaume Bouche
- 申请人地址： US CA San Jose
- 专利权人： Maxim Integrated Products, Inc.
- 当前专利权人： Maxim Integrated Products, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Advent, LLP
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L21/8238
摘要：
Semiconductor devices, such as LDMOS devices, are described that include an interlayer-dielectric layer (ILD) region having a thickness of at least two and one half (2.5) microns to increase the maximum breakdown voltage. In one or more implementations, the semiconductor devices include a substrate having a source region and a drain region formed proximate to a surface of the substrate. A gate is positioned over the surface and between the source region and the drain region. An ILD region having a thickness of at least two and one half (2.5) microns is formed over the surface and the gate of the device. The device also includes one or more field plates configured to shape an electrical field generated between the source region and the drain region when a voltage is applied to the gate.