Invention Grant
- Patent Title: Microstructure and electronic device
- Patent Title (中): 微结构和电子器件
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Application No.: US12979160Application Date: 2010-12-27
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Publication No.: US09174835B2Publication Date: 2015-11-03
- Inventor: Ming Fang
- Applicant: Ming Fang
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group PLLC
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00

Abstract:
A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on one or more surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.
Public/Granted literature
- US20120161573A1 SURFACE ALLOY PROCESS FOR MEMS AND NEMS Public/Granted day:2012-06-28
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