Invention Grant
US09177787B2 NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate
有权
在衬底上含有三维结构层的等离子体氮化的NH 3
- Patent Title: NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate
- Patent Title (中): 在衬底上含有三维结构层的等离子体氮化的NH 3
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Application No.: US14195273Application Date: 2014-03-03
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Publication No.: US09177787B2Publication Date: 2015-11-03
- Inventor: Theresa Kramer Guarini , Wei Liu
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/56
Abstract:
Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a first temperature; and exposing the first layer to an RF plasma formed from a process gas comprising ammonia (NH3) to transform the first layer into a nitrogen-containing layer, wherein the plasma has an ion energy of less than about 8 eV.
Public/Granted literature
- US20140273517A1 NH3 CONTAINING PLASMA NITRIDATION OF A LAYER OF A THREE DIMENSIONAL STRUCTURE ON A SUBSTRATE Public/Granted day:2014-09-18
Information query
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